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Avalanche Photodiode using Microtextured Silicon.

Mazur and Friend

Avalanche Photodiode
 
Response from Avalanche Photodiode
 
Output: In collaboration with Radiation Monitoring Devices, Incorporated of Watertown, MA, Mazur and Friend have developed a prototype avalance photodiode (APD) using microtextured silicon. The APD produces a signal in the infrared at 1.3 µm where ordinary silicon produces a signal only at bias voltages near the breakdown threshold.
 
Outcome: The subbandgap photocurrent shows great promise for a new class of infrared detectors. The demonstrated subbandgap responsivity extends the wavelength range of silicon-based detectors beyond 1.1 µm to wavelengths which are of great importance in optoelectronic communications.

Last Modified February 2, 2001